2N6107 2N6109 2N6111
2N6288 2N6290 2N6292
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6107, 2N6288
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N6111 2N6109 2N6107
SYMBOL 2N6288 2N6290 2N6292
VCBO
40
60
80
VCEO
30
50
70
VEBO
5.0
IC
7.0
ICM
10
IB
3.0
PD
40
TJ, Tstg
-65 to +150
ΘJC
3.13
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=20V (2N6111, 2N6288)
ICEO
VCE=40V (2N6109, 2N6290)
ICEO
VCE=60V (2N6107, 2N6292)
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6111, 2N6288)
30
BVCEO
IC=100mA (2N6109, 2N6290)
50
BVCEO
IC=100mA (2N6107, 2N6292)
70
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hfe
fT
Cob
IC=7.0A, IB=3.0A
VCE=4.0V, IC=7.0A
VCE=4.0V, IC=2.0A (2N6107, 2N6292)
VCE=4.0V, IC=2.5A (2N6109, 2N6290)
VCE=4.0V, IC=3.0A (2N6111, 2N6288)
VCE=4.0V, IC=7.0A
VCE=4.0V, IC=0.5A, f=50kHz
VCE=4.0V, IC=0.5A, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
30
30
30
2.3
20
4.0
MAX
100
2.0
1.0
1.0
1.0
1.0
3.5
3.0
150
150
150
250
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
R1 (10-April 2013)
2N6107 2N6109 2N6111
2N6288 2N6290 2N6292
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
R1 (10-April 2013)
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REQUESTING PRODUCT PLATING
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ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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